发明名称 Sputtering target for magnetic recording medium and method of producing the same
摘要 A sputtering target preferably having an average crystal-grain diameter of 300 mu m or less and a maximum magnetic permeability of 100 or less is formed of an alloy consisting essentially of, by atom, 5- 30% Ni, 5- 14% Cr, not more than 6% V, and balance of Co and unavoidable impurities. It is preferable for the target to keep a working-strain remaining therein to reduce the maximum magnetic permeability. A method of producing a sputtering target for magnetic recording and reproducing, in which warm working or cold working is applied to the alloy.
申请公布号 US5334267(A) 申请公布日期 1994.08.02
申请号 US19930099425 申请日期 1993.07.30
申请人 HITACHI METALS, LTD. 发明人 TANIGUCHI, SHIGERU;KAWAKAMI, AKIRA;MURATA, HIDEO
分类号 C22C19/07;C23C14/34;G11B5/85;G11B5/851;H01F10/16;(IPC1-7):C22C19/07 主分类号 C22C19/07
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