发明名称 |
Process for selective formation of II-VI group compound film |
摘要 |
A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) with larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (SNDL).
|
申请公布号 |
US5334864(A) |
申请公布日期 |
1994.08.02 |
申请号 |
US19920818530 |
申请日期 |
1992.01.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TOKUNAGA, HIROYUKI;YONEHARA, TAKAO |
分类号 |
H01L21/36;H01L21/84;H01L31/032;H01L31/18;(IPC1-7):H01L29/161;H01L27/12 |
主分类号 |
H01L21/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|