| 摘要 |
1. A processing method for post-etching dips including HCl solutions, in particular after etching iron or copper, consisting in the removing of HCl at a higher temperature and in the absorption in water of the evaporated HCl, characterized in that the removing of HCl from the post-etching dip is carried out by desorption in the dynamic foam phase at 30-75 degrees C, and preferably at 40-60 degrees C, by removing the water solution of iron chlorides and the gaseous mixture that includes 5-16% per volume of hydrogen chloride with steam and 84-95% per volume of nitrogen with oxygen, whereas the oxygen content is lower than in air, and preferably lower by 0.30 up to 3.2% per volume, and further by contacting the gaseous mixture with a surface that mainly consists of elemental carbon that preferably makes approximately 67% of the area at least.
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