| 摘要 |
<p>According to the invention, in order to mark a reference direction on a wafer of a low hardness monocrystalline semiconductor material, an imprint (1) is formed on the useful surface of the wafer in a non-useful area of this surface, the imprint revealing at least one direction from which the reference direction (9, 11, 13) is derived, and the latter is marked by a line in the non-useful area. With the reference direction corresponding to a cleavage plane of the wafer, the latter is furthermore cleaved by marking a cleavage line along the reference direction on the other surface of the wafer. …<IMAGE>… </p> |
