发明名称 |
High performance MESFET with multiple quantum wells. |
摘要 |
<p>A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate (204). The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: a first region (250) of Si extending from the FET's source to a point under the FET's gate, beyond the gate's midpoint; a second region extending from the first region to the FET's drain (240), comprised of a superlattice of alternating Si and SiGe layers (206); and, a third region (202) of Si extending under the first two regions from the source to the drain. The first region has a laterally graded dopant that creates an accelerating electric field. The superlattice structure increases electron mobility and transit velocity. <IMAGE></p> |
申请公布号 |
EP0607729(A2) |
申请公布日期 |
1994.07.27 |
申请号 |
EP19930480207 |
申请日期 |
1993.12.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MOHAMMAD, NOOR S.;RENBECK, ROBERT BUCH |
分类号 |
H01L21/337;H01L21/338;H01L29/10;H01L29/778;H01L29/808;H01L29/812;(IPC1-7):H01L29/808 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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