Improved isolation for high voltage/low voltage combined processes.

摘要

A method for isolating devices in a semiconductor body. A field plate 228 is embedded in a field oxide region 208 to isolate a device such as transistor 262 from other devices. Field plate 228 comprises a conductive material such as polysilicon and is electrically connected to well region 204. A portion of well region 204 below field plate 228 is doped to form channel stop 220. Insulator layer 230 is formed over field plate 228 to insulate field plate 228 from other device elements (not shown). Other devices, systems and methods are also disclosed. <IMAGE>