| 发明名称 |
Elimination of local loading effect in dielectric planarization. |
| 摘要 |
<p>Local loading effects are reduced in a planarizing etchback of a dielectric layer by using a plasma comprising SF6.</p> |
| 申请公布号 |
EP0607684(A2) |
申请公布日期 |
1994.07.27 |
| 申请号 |
EP19930310123 |
申请日期 |
1993.12.15 |
| 申请人 |
AT&T CORP. |
发明人 |
ALUGBIN, DAYO;OLASUPO, KOLAWOLE RAHMAN;KORNBLIT, AVINOAM;MARTIN, EDWARD PAUL |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/3105;H01L21/311;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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