发明名称 |
Method of producing defect free epitaxially grown silicon. |
摘要 |
<p>A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.</p> |
申请公布号 |
EP0313493(B1) |
申请公布日期 |
1994.07.27 |
申请号 |
EP19880480025 |
申请日期 |
1988.09.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEYER, KLAUS DIETRICH;LU-CHEN HSU, LOUIS;SCHEPIS, DOMINIC JOSEPH;SILVESTRI, VICTOR JOSEPH |
分类号 |
H01L21/205;H01L21/76;H01L21/762;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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