| 摘要 |
The method includes the steps of forming a SiO insulating layer on a Ni-Zn ferrite substrate 1 by sputtering, alternately depositing an antimon and indium on the insulating layer to form antimony indium thin film 3, forming a protection layer 4 on the antimony indium thin film, performing heat treatment to induce mutual diffusion of antimony and indium, thereby obtaining antimonic indium thin film having uniform characteristics.
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