| 摘要 |
PURPOSE: To achieve a large capacitance value and a high-integration semiconductor structure by providing a stage with a substrate, a stage for creating a conductor region on the substrate, and a stage for creating an insulator layer on the conductor region and the substrate. CONSTITUTION: A micro-type electronic device 12 has a substrate 30, and a pad electrode 32 is created on the substrate 30. An insulator layer or a middle level oxide layer 36 is created on the structure of the micro-type electronic device 12. An etching stop layer 38 is created on the entire part of the micro- type electronic device 12. A spacer layer 40 is deposited on the etching stop layer 38. The spacer layer 40 is preferably as thick as approximately 2,000 Å. The layer of a conductor material is deposited on the pad electrode 32 and a first conductor layer 42 is created. |
