| 摘要 |
PURPOSE:To improve the element separating ability of an element separating film by simultaneously injecting boron into parts immediately below a gate and the element separating film. CONSTITUTION:After forming an element separating oxide film 5, boron which have energy that can pass through the film 5 is simultaneously injected into parts immediately below the film 5 and a gate electrode 12. When the boron is fully injected into such narrow element separating areas that use a direct contact section 25A and partially injected into required areas only at high-speed parts, a high-speed element and large-capacity RAM cell can be manufactured simultaneously. |
