发明名称 |
Semiconductor memory NAND with wide space between selection lines |
摘要 |
A semiconductor memory device having a NAND-type memory cell structure for preventing the occurrence of an electrical bridge resulting from impurity particles generated during a manufacturing process. The space between the word-line whereto a Vcc voltage is applied and the string selection line whereto a Vss voltage is applied and a space between the string selection line of the string selection transistor and the word-line of the cell transistor adjacent to the string selection transistor, are wider than that between the word-lines so as to prevent early stand-by current failure caused by the special stand-by conditions of a NAND-type memory cell. Therefore, the occurrence of a polysilicon bridge between the word-line and the string selection line due to impurity particles generated during the manufacturing process is prevented. As a result, a defectively manufactured chip can be resurrected by the data correction means provided within the memory device.
|
申请公布号 |
US5332917(A) |
申请公布日期 |
1994.07.26 |
申请号 |
US19930170884 |
申请日期 |
1993.12.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HYONG-GON;CHOI, JUNG-DAL;CHANG, SOK-GUEN |
分类号 |
G11C17/12;H01L21/8246;H01L27/112;(IPC1-7):H01L29/68 |
主分类号 |
G11C17/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|