| 摘要 |
PURPOSE:To obtain a low noise, low power consumption, high integration non- volatile semiconductor memory which can retain information stably by employing a ferroelectric. CONSTITUTION:When the operation is ended, a selection transistor is turned OFF after equalizing the potentials, of data line and a plate electrode. At the time of waiting, potential at an information accumulating node is sustained close to the plate potential through the leak of the selection transistor and a ferroelectric capacitor. At the time of reading, data line isolation switches CSWa1,... are interrupted upon finish of amplification through sense amplifiers SAa1,... and a memory cell array is returned to waiting state. Consequently, information can be retained stably with low power consumption even if the plate potential is constant. Since the leak characteristic request of the selection transistor and ferroelectric film is not strict, memories can be fabricated easily with high yield. Furthermore, a memory requiring no formation of well can be obtained by employing a thin film transistor as the selection transistor. |
