| 摘要 |
PURPOSE:To evaluate quality of chemical treatment for a surface of a semiconductor by measuring the surface of the semiconductor by an ATR method by an internal reflection. CONSTITUTION:A method for manufacturing a semiconductor device conducts chemical treatments such as etching, surface cleaning, etc. In the case of such treatment, an ATR measuring prism 4 is dipped together with a semiconductor wafer 3 to be chemically treated in chemical treating liquid 2 in a treating tank 1, and simultaneously chemically treated under the same conditions. Then, an ATR treatment is conducted. That is, an infrared light 7 irradiating from an infrared spectrometer 6 is introduced to an incident surface 8, and the introduced light is internally multiply reflected by the prism 4. The multiply reflected light is externally irradiated from an irradiating surface 10, and detected by a detector 11. Thus, quality of the chemical treatment for the surface of a semiconductor can be evaluated. |
