| 摘要 |
PURPOSE:To provide a semiconductor device which has a large capacitance and high reliability in electrical connection even when a superposing deviation occurs during the photoengraving process performed to form a contact hole. CONSTITUTION:A lower electrode layer composed of an extended section 9 and cylindrical section 10 is formed directly on a silicon oxide film 6c so that the electrode layer can be brought into contact with a source-drain area 5 through a contact hole 15b formed in the film 6c. Then the inner peripheral area of the section 10 is filled up with an insulating film 35. After selectively forming a photoresist only in the outer peripheral area of the section 10 so as to cover the film 6c, the photoresist is heat-treated and the film 35 is etched off. Then the photoresist 32c is removed. Finally, an upper electrode layer is formed on the lower electrode layers 9 and 10 with a capacitor dielectric film in between. |
