STRUCTURE OF SEMICONDUCTOR RIDGE WAVEGUIDE AND ITS MANUFACTURE

摘要

PURPOSE: To provide a multilayer structure of 1,300 nm ridge waveguide structure and its manufacturing method. CONSTITUTION: A semiconductor ridge waveguide laser structure has a plurality of layers that are constituted of a p-type InP substrate 10, an n-type InP buffer layer 12, a thin, 1,100ÅInGaAsP active layer 14, a P-type InP graded layer 16, an arbitrary etching stop layer 18, a p-type InP clad layer 20, and a p<+> -type InGaAs layer 22, thus achieving an extremely high reliability and hence a manufacturing method with a high yield and at the same time an extremely improved temperature operation and a structure for suppressing a higher-order mode.