发明名称 |
Method of manufacturing semiconductor device having elements isolated by trench |
摘要 |
This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 mu m or more.
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申请公布号 |
US5332683(A) |
申请公布日期 |
1994.07.26 |
申请号 |
US19930015672 |
申请日期 |
1993.02.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIYASHITA, NAOTO;TAKAHASHI, KOICHI;SONOBE, HIRONORI |
分类号 |
H01L21/32;H01L21/763;(IPC1-7):H01L21/265;H01L29/70 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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