| 摘要 |
PURPOSE:To realize selective etching of a chemically stable carbon film by providing the film as a final coating on an upper surface previously formed with a semiconductor integrated circuit or a power transistor. CONSTITUTION:A film containing carbon or carbon as a main ingredient is formed on a board 31 of a base. A mask having a blocking action for plasma oxygen compound gas is arranged on the film. A plasma is generated in the carbon film having no mask film, and removed by etching with the oxygen compound gas. The carbon to be used has a hardness similar to that of diamond. Carbon having amorphous or semiamorphous structure or a composite in which carbon containing so-called carbon added with 25 atomic % or less of halogen element, 5 atomic % or less of trivalent or pentavalent impurity or a concentration of N/C <=0.05 of nitrogen as a main ingredient in the carbon is provided on solid is provided. |
