STRUCTURE NAND TYPE ROM CELL AND FABRICATING METHOD THEREOF

摘要

The method is for manufacturing NAND type ROM cells without channel shortage and enhanced integration rate by formation of double polysilicon gate poly. The method consists of the four steps of: (A) forming a gate process by depositoin of a silicon dioxide film (2) on the substrate (1) and depositing a polysilicon layer (3); (B) coating and etching of photoresist and injection of n+ ion; (C) depositing and etching of a second silicon dioxide film (6) through the photo etch process, (D) depositing a second polysilicon layer and contact with the previously deposited polysilicon layer for the formation of a gate array.