| 摘要 |
The method prevents a parastic bipolar junction transistor characteristic by impurity ion injection into LDS and LDD area, reduces a hot-carrier and short channel effect and improves reliability of device. The method includes a 1st process whcih injects an impurity ion to mono crystal silicon layer, a 2nd impurity ion injection process on masking LDS area and Limting LDD area and 3rd impurity ion injection process to form source and drain. An impurity ion injection density to LSD area in a 1st process is 1015-1015 atoms/cm3 and an impurity ion injection density to LDD area in a 2nd process is 1018-1019 atoms/cm3.
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