| 摘要 |
The method reduces resistance of metal wire by adjustment of wire thickness, and increases the open ratio of LCD structure. The method includes a forming process of opening by removement of specified thickness on an exposed substrate, an opening filling process which paints a 1st metal layer , a 2nd metal layer forming process and a 2nd photo sensitive layer removing process. The substrate is made of silicon oxide, silicon nitride, BPSG, PSG, USG, or glass. A 1st and 2nd metal layers are one of Al, Ta, W, Tia and MO materials. A 1st and 2nd metal layers are gate electrodes.
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