EEPROM HAVING A CELL ARRAY OF NAND STRUCTURE

摘要

The EEPROM is for prevention of loss of the information of neighboring cells of the programming cells by maintaining uniform drain voltage of the cell transistors. The drain voltage can be maintained by turning off the dummy cell transistor (TD) which is placed between the eight cell transistors and the bit line. Another method for maintaining the drain voltage uniformally is making the cell transistors to remain in the linear operation range using a step up circuit (10), a pass voltage supply (20) for driving the gate of cell transistors, and a programming voltage supply (30).