MANUFACTURING METHOD OF THIN FILM TRANSISTOR

摘要

The method is enable to make Al alloy taper shape by adjustment of etching quantity, and improves a productivity. The forming method of Al gate and oxidation layer includes an evaporation process in which an alloy is evaporated on a substrate to form a Al2O3 layer, a forming process, a photo resist pattern forming process on Al2O3, and Al alloy layer and a positive oxidation process. An Al alloy is selectively made from Al-Si, Al-Pd, Al-Ni, Al-ge, Al-w. A positive oxdation layer has a Sl alloy for positive SUS or Pt for negative. A current density is 0.5-5 mA/cm2 at current control process.