METHOD OF FABRICATING INSULATING FILM FOR CAPACITOR

摘要

The high dielectric constant of Ta2O5 thin layer of 64 MDRAM is kept and the leakage current is decrease by adopting the insulating layer. The method comprises the steps of: (A) forming Ta2O5 thin layer by injecting Ta(C2H5O)5 gas and operating a RF generator; and (B) providing N2O gas by scheduled amount so that an SiO2 layer is formed between a silicon layer and Ta2O5 thin layer.