发明名称 MANUFACTRUING METHOD FOR POLYSILICON FILM
摘要 The method is for manufacturing a polycrystal silicon thin layer having large grains. The method comprises the steps of: (A) forming a polycrystal silicon on a substrates; (B) etching a polycrystal silicon layer to form seeds; (C) forming amorphous silicon on a substrate and seeds; and (D) growing seeds to form polycrystal silicon.
申请公布号 KR940006666(B1) 申请公布日期 1994.07.25
申请号 KR19910000465 申请日期 1991.01.14
申请人 GOLDSTAR ELECTRON CO., LTD. 发明人 CHOE, JONG - MUN
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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