发明名称 |
MANUFACTRUING METHOD FOR POLYSILICON FILM |
摘要 |
The method is for manufacturing a polycrystal silicon thin layer having large grains. The method comprises the steps of: (A) forming a polycrystal silicon on a substrates; (B) etching a polycrystal silicon layer to form seeds; (C) forming amorphous silicon on a substrate and seeds; and (D) growing seeds to form polycrystal silicon.
|
申请公布号 |
KR940006666(B1) |
申请公布日期 |
1994.07.25 |
申请号 |
KR19910000465 |
申请日期 |
1991.01.14 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
CHOE, JONG - MUN |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|