| 摘要 |
<p>PURPOSE:To substantially reduce the time required for the manufacturing process of a semiconductor device by heat-treating the semiconductor device at an arbitrary temperature in a housing chamber by controlling a heater mechanism and cooling mechanism. CONSTITUTION:A heater mechanism 11 composed of heating means, such as lamp heaters, etc., and piping mechanism 12 which sends a nitrogen gas (N2) into a housing chamber 2 and, at the same time, discharges the N2 to the outside are provided in the ceiling section of the chamber 2. In addition, a temperature control mechanism 13 which adjusts the temperature in the chamber 2 in such a way that the inside of the chamber 2 is maintained at a designated prescribed temperature by automatically controlling the mechanisms 11 and 12 or automatically changed under a designated temperature condition is provided in the chamber 12. At the time of aging semiconductor devices housed in the chamber 2, the mechanism 13 maintains the temperature in the chamber 2 at a designated prescribed temperature by automatically controlling the mechanisms 11 and 12. Since no separate housing time nor aging time is required, the time required by the manufacturing process of the semiconductor device can be substantially reduced.</p> |
