发明名称 WORD-LINE DRIVE CIRCUIT OF LOW POWER- CONSUMPTION TYPE
摘要 <p>PURPOSE: To attain a smooth operation even for the fluctuation of a critical voltage despite of low power consumption by using a depletion type FET and an increase type FET as an FET for a load. CONSTITUTION: When a word line is not selected, that is, when a low signal is applied to an input end IN, currents are instantaneously interrupted by two increase type FETs J6 and J7 being a push and pull circuit, and currents are hardly allowed to run through a depletion type FET J5 with a small capacity. On the other hand, when the word line is selected, that is, when a high signal is applied to the input end IN, the depletion type FET J5 reduces the dropping phenomenon of the high level of an output end OUT and the deterioration of a driving capability generated at the fluctuation of the critical voltage of the increase type FET J6.</p>
申请公布号 JPH06203572(A) 申请公布日期 1994.07.22
申请号 JP19910221027 申请日期 1991.08.06
申请人 KORIA ELECTRON & TELECOMMUN RES INST 发明人 KUANJIYUN YUN;CHIYANSHIYOKU RII;HIYUNMU PAKU;NAKUSHIYON SHIYONGU
分类号 G11C11/41;G11C8/08;G11C11/407;G11C11/413;H03K19/017;H03K19/0185;(IPC1-7):G11C11/413 主分类号 G11C11/41
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