| 摘要 |
PURPOSE: To accomplish a P-N junction device containing a III-V compound semiconductor by a method wherein a P-region or an N-region or both P and N regions form a superlattice selectively doped with an amphoteric IV-group element selected from carbon, germanium and silicon. CONSTITUTION: A P-N junction is formed using a (GaAs)3.75 /(InAs)4.24 superlattice 19 to be used for a P-type region and an N-type region. This P-N junction device contains an N<+> InP substrate 11, an Si-doped N<+> type Ga0.47 In0.53 As buffer layer 12, a C-doped (2×10<16> /cm<-3> ) N-type superlattice region 13, a C-doped (2×10<16> /cm<-3> ) P-type superlattice region 14 and a P<+> type Ga0.47 In0.53 As contact layer 16. Accordingly, circular AuBe (ϕ=500μm) metallization, which is annealed at 380 deg.C for 25 seconds, is used as a top ohmic contact 17, and the device can be obtained by alloying In metallization 18 to the substrate 11.
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