| 摘要 |
PURPOSE: To provide a shallow junction device which is free from defects and a leakage junction when a bipolar emitter is formed by a method wherein a step where a doped SOG layer is formed on a base by spinning. CONSTITUTION: When a semiconductor device 10 possessed of a bipolar emitter 14, a collector 12, and a base 13 is formed, a step where a doped SOG layer 28 is formed on the base 13 by spinning is provided. For instance, the doped SOG layer 28 is formed as thick as about 1000Åto 157μm by spinning on a semiconductor wafer where the collector 12 and the base 13 are formed. Etching is carried out, whereby the doped SOG layer 28 is left only on the contact regions of the emitter 14 and the collector 12. Thereafter, the wafer is heated through an oven cycle or an RTP cycle, whereby dopant is diffused into the silicon 13 from the layer 28 to form the emitter 14 and a collector region.
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