发明名称 MANUFACTURE OF SEMICONDUCTOR RADIATION DETECTOR
摘要 PURPOSE:To furnish a mechanical cutting method not deteriorating a detection characteristic, taking it into consideration that a compound semiconductor crystal such as CdTe tends to be cracked and, besides, a defect or the like tends to occur in the crystal in mechanical cutting. CONSTITUTION:A process of forming electrodes 2 on the main surfaces of a substrate 1 constituted of a compound semiconductor of which the main constituent is CdTe (a), and a process of cutting the substrate 1 and the electrodes 2 in a state wherein other semiconductor substrates 1 are made to adhere to the electrodes 2 (b), are executed sequentially.
申请公布号 JPH06204545(A) 申请公布日期 1994.07.22
申请号 JP19920358667 申请日期 1992.12.28
申请人 JAPAN ENERGY CORP 发明人 IWASE YOSHITOMO;TAKAMURA HIDETO;SHUDO YASUHIRO
分类号 G01T1/24;H01L27/14;H01L31/09;(IPC1-7):H01L31/09 主分类号 G01T1/24
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