| 摘要 |
PURPOSE:To improve sensitivity, filter factor of a long wavelength, to improve a photoelectric conversion efficiency, to suppress an optical deterioration, to improve field durability and to improve temperature characteristics. CONSTITUTION:A p-type layer 104 made of amorphous silicon semiconductor containing hydrogen, an i-type layer 103 made of amorphous silicon germanium semiconductor containing hydrogen, and an n-type layer 102 made of amorphous silicon semiconductor containing hydrogen are laminated in a substrate state. The layer 103 is formed at 400-600 deg.C of the substrate by using a microwave plasma CVD method. The layer 103 contains finely crystalline germanium in such a manner that the grain size of the germanium is 50-500 Angstrom. A content of the germanium is varied in a layer thickness direction. |
