发明名称 Manufacture of multilayer circuits on insulated substrates
摘要 The process is for mfg. a multilayer circuit having alternate conducting circuits and insulated layers on an insulated substrate. A low viscosity metallic compound with gold base is deposited on the substrate as a film. A first network is deposited electrolytically and metal is photolithographically applied to the film. The first insulating layer can cope with temperatures up to 800 deg.C without modifying the thin film characteristics. Holes are prepared through the layer using photo etching and then heated to 800 deg.C and 900 deg.C. These operations are repeated to build up further layers of networks.Each network conductor is formed by depositing gold or copper on the film. A thin film of nickel allows oxygen diffusion.
申请公布号 FR2700659(A1) 申请公布日期 1994.07.22
申请号 FR19930000400 申请日期 1993.01.18
申请人 MATRA SEP IMAGERIE INFORMATIQUE 发明人 SAMSON DIDIER
分类号 H01L21/48;H05K3/24;H05K3/46;(IPC1-7):H05K3/46;H05K3/42 主分类号 H01L21/48
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