METHOD FOR REMOVING DIELECTRIC FROM SEMICONDUCTOR SURFACE, METHOD FOR REMOVING OXIDE FROM SEMICONDUCTOR SURFACE AND METHOD FOR PREVENTING DEGRADATION OF SEMICONDUCTOR SURFACE

摘要

PURPOSE: To provide a method of avoiding an excess overetching, which is performed on the surface part of a semiconductor material main body. CONSTITUTION: Oxide films 14 and 12 are removed from the surface of a semiconductor material main body, which has the thick oxide film 14 and the thin oxide film 12 covered with a nitride film adjacent to the film 14, without performing an excess overetching on the surface of the main body. Therefore, a method for avoiding the deterioration of the surface of the main body is disclosed. First, the film 14 is left as one part of the film 14 is left and is etched during a certain period in such a way that the thickness of the film 14 corresponds to that of the film 12. Then, the nitride film 10 covering the film 12 is removed without performing considerably an etching on any of the residual part 115 of the film 14 and the film 12. Lastly, the film 12 and the residual part 115 of the film 14 can be removed from the surface of the main body without performing excessively the overetching on the surface of the main body.