发明名称 MANUFACTURE OF PIEZOELECTRIC THIN FILM VIBRATOR
摘要 PURPOSE:To easily form a piezoelectric thin film vibrator on the surface of a silicon wafer with a simple manufacture process being a photolithography process for one side of the wafer only without forming a sacrificial film. CONSTITUTION:In the process of forming the piezoelectric thin film vibrator by applying anisotropic etching of a (100) Si wafer 1, when the (100) Si wafer 1 is subjected to anisotropic etching, a glass mask 21 is used to form an etching mask pattern on a rear side of the (100) Si wafer 1 so that one side of a rectangular opening has an angle theta (e.g. 20-45 deg.) with respect to a (110) axis of the (100) Si wafer 1. The anisotropic etching is applied by using the mask pattern and a hole used to mount the piezoelectric thin film vibrator is made to the (100) Si wafer 1.
申请公布号 JPH06204776(A) 申请公布日期 1994.07.22
申请号 JP19920349647 申请日期 1992.12.28
申请人 OKI ELECTRIC IND CO LTD 发明人 KASAGI MASAKATSU;MORIMOTO SHIGEYUKI;UU HOKU HOA;SAKAMOTO NOBUYOSHI
分类号 H01L21/306;H01L41/22;H03H3/02;H03H9/17 主分类号 H01L21/306
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