发明名称 |
MANUFACTURE OF PIEZOELECTRIC THIN FILM VIBRATOR |
摘要 |
PURPOSE:To easily form a piezoelectric thin film vibrator on the surface of a silicon wafer with a simple manufacture process being a photolithography process for one side of the wafer only without forming a sacrificial film. CONSTITUTION:In the process of forming the piezoelectric thin film vibrator by applying anisotropic etching of a (100) Si wafer 1, when the (100) Si wafer 1 is subjected to anisotropic etching, a glass mask 21 is used to form an etching mask pattern on a rear side of the (100) Si wafer 1 so that one side of a rectangular opening has an angle theta (e.g. 20-45 deg.) with respect to a (110) axis of the (100) Si wafer 1. The anisotropic etching is applied by using the mask pattern and a hole used to mount the piezoelectric thin film vibrator is made to the (100) Si wafer 1. |
申请公布号 |
JPH06204776(A) |
申请公布日期 |
1994.07.22 |
申请号 |
JP19920349647 |
申请日期 |
1992.12.28 |
申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
KASAGI MASAKATSU;MORIMOTO SHIGEYUKI;UU HOKU HOA;SAKAMOTO NOBUYOSHI |
分类号 |
H01L21/306;H01L41/22;H03H3/02;H03H9/17 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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