| 摘要 |
PURPOSE: To obtain a semiconductor memory device having the minimized area occupied by a unit memory cell by the conventional design rule by a method wherein the gate of the first transmission transistor and the gate of the second transmission transistor are formed into a conductive layer which is different from a word line. CONSTITUTION: A flip flop is composed of the first inverter, composed of the first transmission transistor and the first driving transistor, and the second inverter which is formed by the second transmission transistor and the second driving transistor. Besides, the third inverter, composed of the first load element and the first driving transistor, and the fourth inverter, composed of the second load element and the second driving transistor, are connected to the flip flop. In the above-mentioned memory cell, the gate 14 of the first transmission transistor, the gate of the second transmission transistor and word lines 30 and 34 are formed into the different conductor layers. |
