发明名称 DIVIDING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To divide a semiconductor substrate into semiconductor elements independent of its crystal orientation, to enable chippings and cracks to be less produced on the cut surface of the divided substrate, and to lessen the cut surface and its vicinity of the divided substrate in processing distortion by a method wherein a scribe mark is provided onto the semiconductor substrate, and the substrate is divided along the scribe mark. CONSTITUTION:Semiconductor elements 4 are formed on the surface of a semiconductor substrate 1, a half die-cut groove 2 is continuously provided to the rear of the substrate 1 corresponding to a boundary between the adjacent semiconductor elements 4, a solid scribe mark 3 is provided to the surface of the semiconductor substrate 1 between the adjacent semiconductor elements 4 extending from the one end of the substrate 1 to the other end, and a force is vertically provided to the substrate 1 along all the half die-cut groove 4 or a part of it.
申请公布号 JPH06204336(A) 申请公布日期 1994.07.22
申请号 JP19930292713 申请日期 1993.10.28
申请人 VICTOR CO OF JAPAN LTD 发明人 MURATA TOSHIYA
分类号 H01L21/301;H01L21/78;H01L31/10;H01L33/08;H01L33/30 主分类号 H01L21/301
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