| 摘要 |
PURPOSE:To improve the emission efficiency of a semiconductor light-emiting element by a method wherein a second P-type aluminum gallium arsenide layer having a larger semiconductor impurity concentration than a P-type aluminum gallium arsenide layer is formed between the P-type aluminum gallium arsenide layer and a P-type gallium arsenide layer. CONSTITUTION:An N-type gallium arsenide layer 2 is formed on an N-type silicon substrate 1, an N-type aluminum gallium arsenide layer 3 is formed thereon and further a P-type aluminum gallium arservide layer 4 is formed thereon. On the P-type aluminum gallium arsenide layer 4, a second P-type aluminum gallium arsenide layer 5 containing a larger amount of acceptor such as zinc than the P-type aluminum gallium arsenide layer 4 is formed. Moreover, a gallium arsenide layer 6 containing a large amount of P-type semiconductor impurity as the above is formed. According to this constitution, an emission region and an emission strength are increased. |
