发明名称 INTEGRATED CIRCUIT
摘要 PURPOSE: To provide a treatment in the manufacture of an integrated circuit chip having a transistor, an interconnecting part and a microscopic component and a structure, wherein the chip is constituted of the transistor, the interconnecting part and the microscopic component, and a treatment of a printed circuit board. CONSTITUTION: An integrated circuit has conductive elements 415.i and 417.j and a radiation-sensitive material layer radiated with radioactive rays at a irradiation dose in such a way that different parts 447, which are arranged between these elements, have different conductivities. Moreover, a method of forming the integrated circuit has a step of depositing a radiation-sensitive material as the later and a step, wherein radioactive rays of a changed dose are radiated in this layer to form a higher-conductivity region and a lower- conductivity region within this layer. A printed-circuit board has a radiation- sensitive material layer and moreover, this board has a conductive layer mounted to a base. A transistor has a radiation-sensitive material layer radiated with radioactive rays in such a way as to have two conductive regions separated from each other by a lower-conductivity gap in the above radiation-sensitive material layer and a conductive material layer deposited on the gap.
申请公布号 JPH06204221(A) 申请公布日期 1994.07.22
申请号 JP19910252092 申请日期 1991.09.30
申请人 TEXAS INSTR INC <TI> 发明人 ROORANTO ZAUERUBURAI;MAIKERU SHII SUMEIRINGU
分类号 H01L21/82;H01B1/12;H01L21/3205;H01L21/48;H01L21/768;H01L21/822;H01L23/12;H01L23/52;H01L23/522;H01L23/525;H01L23/532;H01L27/04;H05K1/09;H05K1/11;H05K3/10;H05K3/40;(IPC1-7):H01L21/320;H01L21/90 主分类号 H01L21/82
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