| 摘要 |
<p>PURPOSE:To improve the production yield and reliability of a thin-film transistor matrix substrate by forming the flanks of patterns into a continuously tapered shape to improve the coverage of, for example, transparent electrode films. CONSTITUTION:1) A mixed film 4 consisting of materials varying in etching rates with an etchant to be used is deposited on a substrate 1 in such a manner that the existence ratio of the material having the higher etching rate is increased toward the front surface by changing the existence ratio in the thickness direction. The above-mentioned mixed film 4 is so constituted as to be patterned by using the etchant. 2) The etchant is a liquid mixture composed of at least phosphoric acid and nitric acid and contains the nitric acid at >=1/300 by weight of the phosphoric acid. The materials varying in the etching rate are Al and Mo and the mixed film is so constituted that the existence ratio of the Al in the thickness direction is higher on the substrate side and that the existence ratio of the Mo is higher on the front surface side.</p> |
