| 摘要 |
<p>PURPOSE:To reduce gate voltage for drawing out an electron from a microemitter. CONSTITUTION:A microemitter 16 with a sharp point end is formed in a semiconductor substrate 11. An insulating film 17 is formed in a surface of this microemitter 16. Next, an electric conductor 18 of thickness larger than height of the microemitter 16 is formed on the insulating film 17. Then, a surface of the electric conductor 18 is flatted. A mask 19 is formed on the electric conductor 18. Next by using the mask 19 to selectively remove the electric conductor 18, and a gate electrode 20 is formed. Then by using the mask 19 to selectively remove the insulating film 17, the microemitter 16 is exposed.</p> |
