| 摘要 |
PURPOSE:To provide the manufacture of a dielectric thin film by which a dielectric thin film having a dielectric constant very close to the dielectric constant which is innate in a bulk can be manufactured in the manufacture of a dielectric film used particularly for a semiconductor memory such as a dynamic RAM. CONSTITUTION:A tantalum layer 12 and a platinum 14 are successively deposited on a silicon substrate 10. Next, a dielectric layer 16 is deposited on a platinum layer 14. Successively, oxygen ions are implanted into vicinity of the boundary surface of the grown dielectric layer 16 to the platinum layer 14 to forman ion implantation layer 18. Successively, it is annealed in the oxygen atmosphere at a temperature of about 400 deg.C to 700 deg.C for about one hour. Next, the dielectric layer 16 is etched to expose the platinum layer 14 making a lower electrode and at the same time to pattern the dielectric layer 16. Successively, a platinum electrode 20 making an upper electrode is formed on the dielectric layer 16. |
