发明名称 SILICON NITRIDE BASED TARGET MATERIAL FOR SPUTTERING
摘要 PURPOSE:To provide a silicon nitride based target material for sputtering with uniform, homogeneous and fine composition having high strength and purity. CONSTITUTION:The silicon nitride based target material for sputtering step is composed of a molded and sintered mixture of silicon nitride powder and polysilazane, especially perhydropolysilazane. In such a constitution, the silicon nitride base target material for sputtering step can be obtained by the polysilazane in extremely high purity discharging the functions as an excellent molding and sintering binder.
申请公布号 JPH06204214(A) 申请公布日期 1994.07.22
申请号 JP19920349559 申请日期 1992.12.28
申请人 TONEN CORP 发明人 SUZUKI SUNAO
分类号 C04B35/589;C04B35/58;H01L21/318 主分类号 C04B35/589
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