| 摘要 |
PURPOSE:To increase the capacity of a capacitor without the flat area of a DRAM memory cell having the structure of stacked capacitors. CONSTITUTION:A plurality of smooth cup-like depressions 9 are formed in the surface of a polycrystalline silicon film 8 constituting a storage node by photolithography and wet-etching. Thereby, the effective surface area of a capacitor is increased, and at the same time the capacity of a capacitor is increased without the film forming quality of on ONO film 10 which is a dielectric film for a capacitor. |
