发明名称 MANUFACTURE OF CONTACT STUD ON SEMICONDUCTOR STRUCTURE
摘要 PURPOSE: To form contact windows and studs on the upper surface of a semiconductor structure accurately and properly and to augment the integration of the structure. CONSTITUTION: A method of manufacturing contact studs on a semiconductor structure comprises a process, wherein first and second materials 26 and 24 are made to adhere in order on a substrate 10, openings, which penetrate the material 24, for making the excess parts of the material 26 expose are formed and the selected parts of the material 24 are left to form sacrifice elements, a process, wherein the excess parts of the material 26 are selectively removed to the substrate to extend openings formed in the material 26 up to the substrate, whereby the selected parts of the material 26 are left to form the semiconductor structure having the sacrifice elements, a process, wherein the elements are selectively removed to insulating materials 28 and the structure to form contact window openings for enabling access of contact windows to the structure, and a process, wherein the contact window openings are filled with stud materials 33 and 34 so as to contact the contact windows with the structure to fill the openings, which penetrate the material 24, with a first insulating material and the studs are formed.
申请公布号 JPH06204165(A) 申请公布日期 1994.07.22
申请号 JP19920282819 申请日期 1992.10.21
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 DONA RIZOONE KOOTO;DEEBUITSUDO SUTANASOROBUITSUCHI;RONARUDO AACHIYAA WAREN
分类号 H01L21/28;H01L21/3105;H01L21/311;H01L21/318;H01L21/768 主分类号 H01L21/28
代理机构 代理人
主权项
地址