发明名称 GENERATOR AND METHOD FOR GENERATING REFERENCE VOLTAGE
摘要 PURPOSE: To provide a reference voltage generator which can be manufactured by using a standard CMOS or MOS process and operates under a low voltage, regardless of the fluctuation of a power supply voltage. CONSTITUTION: Two current paths are formed between a power supply voltage VCC and a ground plane. One current path passes between the source and drain of an FET 16 and through a resistor 24, and the other current path passes through a resistor 14 and between sources and drains of FETs 18 and 28. The gate electrode of the FET 16 is connected to the source electrode of the FET 18, and the gate electrode of the FET 18 is connected to the drain electrode of the FET 16. The gate electrode of the FET 28 is connected to the ground plane. A reference voltage is outputted from a node 26.
申请公布号 JPH06204838(A) 申请公布日期 1994.07.22
申请号 JP19930219832 申请日期 1993.09.03
申请人 NITTETSU SEMICONDUCTOR KK;UNITED MEMORIES INC 发明人 MAIKERU BUI KOODOBA;KIMU SHII HAADEII;DAKURASU BII BATORAA
分类号 H03G3/02;G05F3/24;G05F3/26;H03K19/00;(IPC1-7):H03K19/00 主分类号 H03G3/02
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