| 摘要 |
<p>PURPOSE:To provide a method of manufacturing a TFT, which is capable of making sufficiently small the resistances of the source and drain electrodes, in the manufacture of the TFT for LCD using a self alignment capable of decreasing the stray capacity due to overlap of a gate electrode with the source or drain electrode. CONSTITUTION:A gate electrode 12 is formed on the surface of a substrate 11 and an SiNx layer 21 which is a first insulating layer, an a-Si layer 22 which is a first semiconductor layer, and moreover, an SiNx layer, which is a second insulating layer, are formed in order on the substrate 12. Then, a resist is applied on the surface of the second insulating layer, the resist is sensitized from the rear of the substrate using the electrode 12 as a mask and an unnecessary part of the resist is etched away to form a mask consisting of the resist on the electrode 12. The second insulating film is etched from over this mask and is left on the electrode 12 to form as a mask layer 31 and an n<+> a-Si layer 41, which is a second semiconductor layer having a carrier concentration higher than that of the layer 22, and a W layer 42, which is a metal layer, are selectively grown on the layer 22 excepting the upper part of the layer 31 formed of the second insulating layer and are made to align with the gate electrode.</p> |
