| 摘要 |
PURPOSE:To enable a semiconductor device to be improved in contact hole filling property and simplified in wiring process by a method wherein at least a wiring is partially formed of aluminum alloy which contains gallium. CONSTITUTION:A contact hole 6 is provided to an insulating film 5 on a semiconductor substrate 1 or a lower wiring, and an upper wiring is connected to the semiconductor substrate 1 or the lower wiring through the intermediary of the contact hole 6. At least, a part of the wirings is formed of aluminum alloy which contains gallium. That is, a silicon gate N-channel MOSFET wherein a first wiring layer 12A of AlSiGa and the continuity part of the contact hole 6 are formed into one piece can be obtained. By this setup, a fine contact hole of the order of sub-micron can be filled up without tungsten. |
