| 摘要 |
PURPOSE: To provide a process of manufacturing an interconnect of a semiconductor structure using a conductive etching stop layer. CONSTITUTION: A method of forming an interconnect comprises a process of adhering a conductive etching stop layer 40 on a structure and a step of adhering a conductor on the layer 40. The layer 40 has the selectivity of etching to the conductor. The conductor is etched, the etching is stopped by the layer 40 and the interconnect is formed. Then, the layer 40 is made to react with the interconnect so that metal alloy layers are formed. The interconnect is electrically connected with the structure through the metal alloy layers 60. Parts, which do not contact the interconnect, of the layer 40 do not react with the interconnect. Lastly, the parts, which do not react, of the layer 40 are etched and are removed.
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