| 摘要 |
An improved process is disclosed for treating aluminum for memory disk applications and for producing metal plated aluminum memory disks. It has been found that a solution prepared from methane sulfonic acid and sodium peroxydisulfate can be used as a direct replacement for a nitric acid bath in the processing of aluminum substrates for memory disk application. In accordance with the present invention, the methane sulfonic acid/sodium peroxydisulphate solution can be used to deoxidize the aluminum substrate prior to zinc deposition and also to remove the first zinc film in either alkaline or acid double zinc plating processes. |
