Crystals are formed by epitaxial growth on a monocrystalline substrate of gallium arsenide, and the orientation of the crystallographical plane of the substrate is inclined at an angle of under one degree with respect to the orientation of the crystallographical plane of one of the {100} planes thereof. At least a part of the epitaxial crystals are crystals of InxGa(1-x)As (where 0 < x < 1). The epitaxial growth is made by a thermal decomposition vapor phase growth method. The microscopical surface roughness of the InxGa(1-x)As layer is small. The variation of the film thickness is also small. Therefore, by using this epitaxial substrate for the channel layer of a field effect transistor, and the active layer of a semiconductor laser, it is possible to give excellent characteristics to these elements.
申请公布号
WO9416459(A1)
申请公布日期
1994.07.21
申请号
WO1994JP00032
申请日期
1994.01.12
申请人
SUMITOMO CHEMICAL COMPANY, LIMITED;HATA, MASAHIKO;FUKUHARA, NOBORU;TAKATA, HIROAKI;INUI, KATSUMI